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Krom, Raymond T.
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Krom, Raymond T.
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Gate-to-channel parasitic capacitance minimization and source-drain leakage evaluation in germanium PMOS /
by
Krom
,
Raymond
T.
Published 2008
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Related Subjects
Design and construction
Electric leakage
Germanium
Industrial applications
Integrated circuits
Metal oxide semiconductors, Complementary
Prevention
Very large scale integration
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